Full-Band and Atomistic Simulation of Realistic 40 nm InAs HEMT

被引：0

作者：

Luisier, Mathieu ^{[1
]}

Neophytou, Neophytos ^{[1
]}

Kharche, Neerav ^{[1
]}

Klimeck, Gerhard ^{[1
]}

机构：

[1] Purdue Univ, Network Computat Nanotechnol & Birck Nanotechnol, W Lafayette, IN 47907 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A realistic 40 nm InAs high electron mobility transistor is studied using a two-dimensional, full-band, and atomistic Schrodinger-Poisson solver based on the sp(3)d(5)s* tight-binding model. Bandstructure non-paraboticity effects, strain, alloy disorder in the InGaAs and InAlAs barriers, as well as band-to-band tunneling in the transistor OFF-state are automatically included through the full-band atomistic model. The source and drain contact extensions are taken into account a posteriori by adding two series resistances to the device channel. The simulated current characteristics are compared to measured data and show a good quantitative agreement.

引用

页码：887 / 890

页数：4

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