Polymorphic gates are capable of adapting to multiple functionalities depending on the application and need. In this paper, we propose a hybrid spin-CMOS polymorphic logic gate based on a novel 6 terminal composite magnetic domain wall motion device structure. As far as we know, we are the first to present a single polymorphic gate that is able to perform a full set of 2-input Boolean logic functions (i.e. AND/ NAND, OR/ NOR, NOT, XOR/ XNOR) by configuring the applied keys. The SPICE device-circuit co-simulation indicates that a full adder design using our proposed polymorphic logic gate shows 45.74% power reduction compared with traditional CMOS full adder design. Moreover, it can be a promising hardware security primitive by implementing logic locking and polymorphic transformation to protect Integrated Circuit (IC) against counterfeiting and reverse engineering. To summarize, our proposed design simultaneously provides non-volatility, low power consumption, compactness and polymorphism to logic circuits, which opens a new paradigm for future power efficient and secured computing.
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Korea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South KoreaKorea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South Korea
Moon, Kyoung-Woong
Kim, Duck-Ho
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Seoul Natl Univ, CSO, Seoul 08826, South Korea
Seoul Natl Univ, Dept Phys, Seoul 08826, South Korea
Kyoto Univ, Inst Chem Res, Kyoto, JapanKorea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South Korea
Kim, Duck-Ho
Kim, Changsoo
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Korea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South KoreaKorea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South Korea
Kim, Changsoo
Kim, Dae-Yun
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Seoul Natl Univ, CSO, Seoul 08826, South Korea
Seoul Natl Univ, Dept Phys, Seoul 08826, South KoreaKorea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South Korea
Kim, Dae-Yun
Choe, Sug-Bong
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Seoul Natl Univ, CSO, Seoul 08826, South Korea
Seoul Natl Univ, Dept Phys, Seoul 08826, South KoreaKorea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South Korea
Choe, Sug-Bong
Hwang, Chanyong
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Korea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South KoreaKorea Res Inst Stand & Sci, Ctr Nanometrol, Daejeon 34113, South Korea
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Univ Basque Country UPV EHU, Dept Adv Polymers & Mat Phys Chem & Technol, San Sebastian 20018, Spain
Univ Basque Country EIG, Dept Appl Phys, UPV EHU, San Sebastian 20018, SpainUniv Basque Country UPV EHU, Dept Adv Polymers & Mat Phys Chem & Technol, San Sebastian 20018, Spain
Corte-Leon, Paula
Zhukova, Valentina
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Univ Basque Country UPV EHU, Dept Adv Polymers & Mat Phys Chem & Technol, San Sebastian 20018, Spain
Univ Basque Country EIG, Dept Appl Phys, UPV EHU, San Sebastian 20018, SpainUniv Basque Country UPV EHU, Dept Adv Polymers & Mat Phys Chem & Technol, San Sebastian 20018, Spain
Zhukova, Valentina
Blanco, Juan Mari
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Univ Basque Country EIG, Dept Appl Phys, UPV EHU, San Sebastian 20018, SpainUniv Basque Country UPV EHU, Dept Adv Polymers & Mat Phys Chem & Technol, San Sebastian 20018, Spain
机构:
Indian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Kandi 502284, Telangana, IndiaIndian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Kandi 502284, Telangana, India
Paikaray, Bibekananda
Kuchibhotla, Mahathi
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Indian Inst Technol Hyderabad, Dept Phys, Kandi 502284, Telangana, IndiaIndian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Kandi 502284, Telangana, India
Kuchibhotla, Mahathi
Haldar, Arabinda
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Indian Inst Technol Hyderabad, Dept Phys, Kandi 502284, Telangana, IndiaIndian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Kandi 502284, Telangana, India
Haldar, Arabinda
Murapaka, Chandrasekhar
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Indian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Kandi 502284, Telangana, IndiaIndian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Kandi 502284, Telangana, India