Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier (vol 24, pg 1432, 2006)

被引：1
|
作者：
Lee, Chang Woo
Kim, Yong Tae
机构：
[1] Kookmin Univ, Seoul 136702, South Korea
[2] Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 04期
关键词：
D O I：
10.1116/1.2217976
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1956 / 1956
页数：1
相关论文
共 50 条
  • [31] Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
    Longrie, Delphine
    Deduytsche, Davy
    Haemers, Jo
    Smet, Philippe F.
    Driesen, Kris
    Detavernier, Christophe
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (10) : 7316 - 7324
  • [32] Effect of Hf sources, oxidizing agents, and NH3/Ar plasma on the properties of HfAlOx films prepared by atomic layer deposition
    Kawahara, T
    Torii, K
    Mitsuhashi, R
    Muto, A
    Horiuchi, A
    Ito, H
    Kitajima, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (7A): : 4129 - 4134
  • [33] Reactive Force Field Molecular Dynamics Studies of the Initial Growth of Boron Nitride Using BCl3 and NH3 by Atomic Layer Deposition
    Uene, Naoya
    Mabuchi, Takuya
    Zaitsu, Masaru
    Yasuhara, Shigeo
    van Duin, Adri C. T.
    Tokumasu, Takashi
    JOURNAL OF PHYSICAL CHEMISTRY C, 2024, 128 (03): : 1075 - 1086
  • [34] Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
    Jeong, Seong-Jun
    Kim, Doo-In
    Kim, Sang Ouk
    Han, Tae Hee
    Kwon, Jung-Dae
    Park, Jin-Seong
    Kwon, Se-Hun
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (01) : 671 - 674
  • [35] Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH3
    Kim, SH
    Kim, JK
    Kwak, N
    Sohn, H
    Kim, J
    Jung, SH
    Hong, MR
    Lee, SH
    Collins, J
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (03) : C54 - C57
  • [36] In Vacuo XPS Study on Pt Growth by Atomic Layer Deposition Using MeCpPtMe3 and N2/NH3 Plasma
    Li, Jin
    Minjauw, Matthias M.
    Solano, Eduardo
    D'Acunto, Giulio
    Shayesteh, Payam
    Schnadt, Joachim
    Detavernier, Christophe
    Dendooven, Jolien
    JOURNAL OF PHYSICAL CHEMISTRY C, 2024, 128 (39): : 16454 - 16466
  • [37] Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
    Cho, Young Joon
    Cha, Hamchorom
    Chang, Hyo Sik
    SURFACE & COATINGS TECHNOLOGY, 2016, 307 : 1096 - 1099
  • [38] Low temperature metalorganic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization (vol B17, pg 1101, 1999)
    Kelsey, JE
    Goldberg, C
    Nuesca, G
    Peterson, G
    Kaloyeros, AE
    Arkles, B
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05): : 2193 - 2193
  • [39] Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
    Jung, Jae-Hun
    Lee, Seung-Joon
    Lee, Hyun-Jung
    Lee, Min Young
    Cheon, Taehoon
    Bae, So Ik
    Saito, Masayuki
    Suzuki, Kazuharu
    Nabeya, Shunichi
    Lee, Jeongyeop
    Kim, Sangdeok
    Yeom, Seungjin
    Seo, Jong Hyun
    Kim, Soo-Hyun
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (11) : 8472 - 8477
  • [40] Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
    Choi, Jong-Sik
    Yang, Bong Seob
    Won, Seok-Jun
    Kim, Jun Rae
    Suh, Sungin
    Park, Hui Kyung
    Heo, Jaeyeong
    Kim, Hyeong Joon
    ECS SOLID STATE LETTERS, 2013, 2 (12) : P114 - P116
12345