Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier (vol 24, pg 1432, 2006)

被引：1
|
作者：
Lee, Chang Woo
Kim, Yong Tae
机构：
[1] Kookmin Univ, Seoul 136702, South Korea
[2] Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 04期
关键词：
D O I：
10.1116/1.2217976
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1956 / 1956
页数：1
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