Thermoelectric properties of CoTiSb based compounds

被引:32
|
作者
Barth, Joachim [1 ]
Balke, Benjamin [1 ]
Fecher, Gerhard H. [1 ]
Stryhanyuk, Hryhoriy [1 ]
Gloskovskii, Andrei [1 ]
Naghavi, Shahab [1 ]
Felser, Claudia [1 ]
机构
[1] Johannes Gutenberg Univ Mainz, Inst Anorgan & Analyt Chem, D-55099 Mainz, Germany
关键词
HALF-HEUSLER COMPOUNDS; MERIT; SEMICONDUCTOR; SUBSTITUTION; TRANSPORT; CRYSTALS; FIGURE; PHASES;
D O I
10.1088/0022-3727/42/18/185401
中图分类号
O59 [应用物理学];
学科分类号
摘要
Several CoTiSb based compounds were synthesized and investigated on their thermoelectric properties. The aim was to improve the thermoelectric properties of CoTiSb by the systematic substitution of atoms or the introduction of additional Co into the vacant sublattice. The solid solutions Co1+xTiSb, Co1-yCuy TiSb and CoTiSb1-zBiz were synthesized. X-ray diffraction was used to investigate the crystal structure. The resistivity, the Seebeck coefficient and the thermal conductivity were determined for all compounds in the temperature range from 2 to 400 K. The highest figure of merit for each solid solution is presented. We were able to improve the figure of merit by a factor of approximately seven.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Substitution effect on thermoelectric properties of ZrNiSn based half-Heusler compounds
    Muta, Hiroaki
    Kanemitsu, Takanori
    Kurosaki, Ken
    Yamanaka, Shinsuke
    MATERIALS TRANSACTIONS, 2006, 47 (06) : 1453 - 1457
  • [22] Influence of Grain Structure Features on the Thermoelectric Properties of Compounds Based on Bismuth Telluride
    Ivanov, O. N.
    Yapryntsev, M. N.
    Vasil'ev, A. E.
    Dan'shina, E. P.
    GLASS AND CERAMICS, 2022, 79 (1-2) : 3 - 8
  • [23] Influence of Grain Structure Features on the Thermoelectric Properties of Compounds Based on Bismuth Telluride
    O. N. Ivanov
    M. N. Yapryntsev
    A. E. Vasil’ev
    E. P. Dan’shina
    Glass and Ceramics, 2022, 79 : 3 - 8
  • [24] Structural, Magnetic, and Thermoelectric Properties of Some CePd3-Based Compounds
    Stephen R. Boona
    Donald T. Morelli
    Journal of Electronic Materials, 2013, 42 : 1592 - 1596
  • [25] Thermoelectric properties of thermoelectric modules consisted of porous FeSi2 based compounds fabricated by pressureless sintering
    Cho, WS
    Park, K
    Choi, SW
    Yoon, YS
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 76 (03): : 200 - 205
  • [26] Thermoelectric Properties of the Compounds APbmLaTem+2
    Ahn, Kyunghan
    Li, Chang-Peng
    Uher, Ctirad
    Kanatzidis, Mercouri G.
    CHEMISTRY OF MATERIALS, 2010, 22 (03) : 876 - 882
  • [27] Electronic structure and thermoelectric properties of skutterudite compounds
    Kurmaev, EZ
    Moewes, A
    Shein, IR
    Finkelstein, LD
    Ivanovskii, AL
    Anno, H
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (06) : 979 - 987
  • [28] GALVANOMAGNETIC AND THERMOELECTRIC PROPERTIES OF CESIX-COMPOUNDS
    ALIEV, FG
    MOSHCHALKOV, VV
    PETRENKO, OV
    BABICH, OI
    FIZIKA TVERDOGO TELA, 1986, 28 (04): : 1141 - 1147
  • [29] High temperature thermoelectric properties of TiNiSn-based half-Heusler compounds
    Kim, Sung-Wng
    Kimura, Yoshisato
    Mishima, Yoshinao
    INTERMETALLICS, 2007, 15 (03) : 349 - 356
  • [30] Thermoelectric properties of ba-ge based Type-III clathrate compounds
    Kim, Jung-Hwan
    Okamoto, Norihiko L.
    Kishida, Kyosuke
    Tanaka, Katsushi
    Inui, Haruyuki
    ADVANCED INTERMETALLIC-BASED ALLOYS, 2007, 980 : 217 - +