Thermal evolution of deuterium in 4H-SiC

被引：0

作者：

Delamare, R ^{[1
]}

Ntsoenzok, E ^{[1
]}

Sauvage, T ^{[1
]}

Shiryaev, A ^{[1
]}

van Veen, A ^{[1
]}

Dubois, C ^{[1
]}

机构：

[1] CNRS, CERI, F-45071 Orleans, France

来源：

DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III | 2002年 / 719卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC samples were implanted at room temperature with 30 keV D+ ions at a dose of 5x10(16) D+/cm(2). Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were performed to study the deuterium profiles after subsequent annealing at 1000-1250degreesC for 10min.Also, analytical techniques: RBS/C and thermal desorption spectroscopy (TDS) were carried out to characterize the evolution of implantation induced defects upon annealing. According to the NRA, measurements, no deuterium release was found in the sample annealed at 1000degreesC. However, increasing the temperature. to 1150degreesC led to a 40% decrease of deuterium content. Similar results about the evolution of D profiles upon annealing have also been obtained by SIMS measurements. In addition, SIMS measurements show that the maximum of the deuterium concentration. shifts to the surface. Deuterium desorption at annealing temperatures higher than 1000degreesC was further confirmed by TDS experiments. Results from RBS/C indicated that during the desorption of deuterium, the implantation induced damage was annealed. These results are discussed.

引用

页码：269 / 274

页数：6

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