Nitride quantum light sources

被引:13
|
作者
Zhu, T. [1 ]
Oliver, R. A. [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England
基金
英国工程与自然科学研究理事会;
关键词
SINGLE-PHOTON EMISSION; DOTS; GROWTH; EXCITONS; DENSITY; CAVITY;
D O I
10.1209/0295-5075/113/38001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Prototype nitride quantum light sources, particularly single-photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offsets available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches has been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single-photon stream and excessive spectral diffusion of the quantum dot emission wavelength. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides. Copyright (C) EPLA, 2016
引用
收藏
页数:7
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