Morphology of Cu(In,Ga)Se2 thin films grown by close-spaced vapor transport from sources with different grain sizes

被引：7
|
作者：
Massé, G [1 ]
Djessas, K
Monty, C
Sibieude, F
机构：
[1] Univ Perpignan, CEF, F-66860 Perpignan, France
[2] CNRS Odeillo, F-66120 Font Romeu, France
来源：
THIN SOLID FILMS | 2002年 / 414卷 / 02期
关键词：
chemical vapor deposition (CVD); deposition process; growth mechanism; selenides;
D O I：
10.1016/S0040-6090(02)00493-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of source material grain size distribution on film structure and morphology were investigated in the growth of Cu(In,Ga)Se-2 thin films by close-spaced vapor transport. These films are designed to be used as absorbers in solar cells. The deposit morphology was simply changed by varying the grain mean size of the powder constituting the source. Film thicknesses on the order of 2 mum and 1-2 mum sized crystallites arranged in a quasi-columnar structure could be obtained. The results are explained in terms of vapor supersaturation and interaction between the gaseous phase and the source, considered as a porous object. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：192 / 198
页数：7
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