Ion implantation by plasma immersion

被引：0
|
作者：
Thomae, R
Bender, H
Halder, J
Hilschert, F
Klein, H
Schafer, J
Seiler, B
机构：
来源：
ION IMPLANTATION TECHNOLOGY - 96 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Plasma immersion ion implantation (PIII) is technique for surface modification. In contrast to conventional ion implantation techniques the target is surrounded by the plasma and then pulse biased to high negative voltages. The plasma is generated in a rf source (13.56MHz) and diffuses into the target processing chamber. In this paper we report on the influence of copper deposition effects on the implantation of oxygen and argon ions into a silicon target.
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页码：757 / 759
页数：3
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