Burn-in stressing effects on post-irradiation annealing response of power VDMOSFETs

被引：0
|
作者：
Djoric-Veljkovic, S [1 ]
Manic, I [1 ]
Davidovic, V [1 ]
Golubovic, S [1 ]
Stojadinovic, N [1 ]
机构：
[1] Univ Nish, Fac Elect Engn, YU-18000 Nish, Serbia Monteneg, Serbia
来源：
2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of pre-irradiation bum-in stressing on post-irradiation annealing response of power VDMOSFETs have been investigated. Threshold voltage rapid increase above its pre-irradiation value (rebound effect) and mobility increase up to the value somewhat higher than the one after irradiation have been observed during post-irradiation annealing. These phenomena occured with certain delay in pre-irradiation stressed devices. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.
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页码：701 / 704
页数：4
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