SmS/SiC Heterostructure and Its Associated Thermovoltaic Effect

被引：2
|
作者：
Kaminskii, V. V. [1 ]
Lebedev, A. O. [1 ,2 ]
Solov'ev, S. M. [1 ]
Sharenkova, N. V. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg State Electrotech Univ LETI, St Petersburg 197376, Russia
来源：
TECHNICAL PHYSICS | 2019年 / 64卷 / 02期
关键词：
VALENCE;
D O I：
10.1134/S1063784219020075
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A heterostructure based on single-crystal SiC and a polycrystalline SmS thin film has been studied. In the temperature interval 300-456 K, the thermovoltaic effect has been measured in the structure, the amount of which reaches similar to 12 mV at 456 K. It has been shown that the amount of this effect correlates with its concentration model developed earlier.
引用
收藏
页码：181 / 182
页数：2
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