Tunable valley polarization, magnetic anisotropy and Dzyaloshinskii-Moriya interaction in two-dimensional intrinsic ferromagnetic Janus 2H-VSeX (X = S, Te) monolayers

被引:42
|
作者
Qi, Shengmei [1 ]
Jiang, Jiawei [1 ]
Mi, Wenbo [1 ]
机构
[1] Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300354, Peoples R China
基金
中国国家自然科学基金;
关键词
TRANSITION-METAL DICHALCOGENIDES; MAGNETOCRYSTALLINE ANISOTROPY; MOS2; GENERATION; STRAIN; ENERGY;
D O I
10.1039/d0cp03292a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) Janus materials are a novel kind of 2D materials, which have potential applications in nanoelectronics, optoelectronics and spintronics. However, a 2D Janus material combined with intrinsic ferromagnetism, electric dipole moment, valley polarization and Dzyaloshinskii-Moriya interaction (DMI) remains rarely reported. Here, the electronic structure and magnetic properties of 2D intrinsic ferromagnetic Janus 2H-VSeX (X = S, Te) monolayers are investigated systematically using the density-functional theory. Janus 2H-VSeX (X = S, Te) monolayers are intrinsic ferromagnetic semiconductors with in-plane magnetic anisotropy (IMA). The valley splitting of Janus 2H-VSeX (X = S, Te) monolayers appears by considering the spin-orbit coupling (SOC) effect and out of plane magnetization. Additionally, spontaneous vertical electric dipole moment and a large DMI are also found in Janus 2H-VSeX (X = S, Te) monolayers due to the broken inversion symmetry. Moreover, the valley splitting and DMI can be significantly increased by applying in-plane biaxial strain. These results provide an interesting 2D intrinsic ferromagnetic Janus material, which has potential applications in spintronic and valleytronic devices.
引用
收藏
页码:23597 / 23608
页数:12
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