Photocurrent Generation in a Silicon Waveguide Integrated with Periodically Interleaved P-N Junctions

被引：0

作者：

Zhu, Haike ^{[1
]}

Zhou, Linjie ^{[1
]}

Sun, Xiaomeng ^{[1
]}

Xie, Jingya ^{[1
]}

Zou, Zhi ^{[1
]}

Lu, Liangjun ^{[1
]}

Li, Xinwan ^{[1
]}

Chen, Jianping ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Elect Engn, State Key Lab Adv Opt Commun Syst & Networks, Shanghai 200240, Peoples R China

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年

关键词：

PHOTODETECTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the photocurrent generation in a silicon waveguide embedded with interleaved p-n junctions. Due to the surface-state absorption and the high built-in electrical-field, the responsivity reaches similar to 14.9 mA/W and the bandwidth is 11.5 GHz.

引用

页数：2

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