Photocurrent Generation in a Silicon Waveguide Integrated with Periodically Interleaved P-N Junctions

被引：0
|
作者：
Zhu, Haike [1 ]
Zhou, Linjie [1 ]
Sun, Xiaomeng [1 ]
Xie, Jingya [1 ]
Zou, Zhi [1 ]
Lu, Liangjun [1 ]
Li, Xinwan [1 ]
Chen, Jianping [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Dept Elect Engn, State Key Lab Adv Opt Commun Syst & Networks, Shanghai 200240, Peoples R China
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年
关键词：
PHOTODETECTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the photocurrent generation in a silicon waveguide embedded with interleaved p-n junctions. Due to the surface-state absorption and the high built-in electrical-field, the responsivity reaches similar to 14.9 mA/W and the bandwidth is 11.5 GHz.
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页数：2
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