High-power laser-patterning graphene oxide: A new approach to making arbitrarily-shaped self-aligned electrodes

被引:22
|
作者
Rodriguez, R. D. [1 ]
Murastov, G. V. [1 ]
Lipovka, A. [1 ]
Fatkullin, M. I. [1 ]
Nozdrina, O. [1 ]
Pavlov, S. K. [1 ]
Postnikov, P. S. [1 ,3 ]
Chehimi, M. M. [2 ]
Chen, Jin-Ju [4 ]
Sheremet, E. [1 ]
机构
[1] Tomsk Polytech Univ, Lenina Ave 30, Tomsk 634034, Russia
[2] Univ Paris Est, CNRS, UMR 7182, UPEC, F-94320 Thiais, France
[3] Inst Chem Technol, Dept Solid State Engn, Prague 16628, Czech Republic
[4] Univ Elect Sci & Technol China, Sch Mat & Energy, Chengdu 610054, Sichuan, Peoples R China
关键词
REDUCTION; GRAPHITE; GAS; NANOSHEETS;
D O I
10.1016/j.carbon.2019.05.049
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We demonstrate the fabrication of self-aligned laser-reduced graphene oxide patterns with a spatial resolution/laser spot size ratio of 1/10, lower than anything reported before using laser-reduction. Laser light modifies graphene oxide (GO) by removing the oxygen-containing groups turning GO into a more graphene-like nanomaterial. Our method is based on high laser power density used for the reduction of GO that results in ablation of the GO film. This enabled us to remove the laser spot illuminated area while inducing the selective graphene oxide reduction at the periphery of the laser spot achieving resistivity of 1.6.10(-5) Omega m, as low as values previously reported for other rGO. Therefore, we can exploit laser-induced reduction at high laser power density to pattern GO films with conductive dimensions that are a fraction of the laser spot size. This innovative method is scalable, inexpensive, and straightforward, allowing conductive circuits on arbitrary, flexible, and transparent substrates for applications in lightweight electronics and wearables. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码:148 / 155
页数:8
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