Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure

被引：0

作者：

Imafuji, Osamu ^{[1
,2
,3
,4
]}

Fukuhisa, Toshiya ^{[1
]}

Yuri, Masaaki ^{[1
]}

Mannoh, Masaya ^{[1
]}

Yoshikawa, Akio ^{[1
]}

Itoh, Kunio ^{[1
]}

机构：

[1] Semiconductor Device Research Center, Semi-conductor Company, Matsushita Electronics Corporation, Takatsuki, Osaka 569-1193, Japan

[2] Kyoto University, Kyoto, Japan

[3] Electronics Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka, Japan

[4] Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corp. T., Osaka, Japan

来源：

IEEE Journal on Selected Topics in Quantum Electronics | / 5卷 / 03期

关键词：

Carrier concentration - Electric currents - High power lasers - High temperature operations - Laser modes - Refractive index - Semiconducting aluminum compounds - Temperature - Waveguides - Waves;

D O I：

暂无

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学科分类号：

摘要：

引用

页码：721 / 728