Structural and physical properties of boron doped ZnO films prepared by chemical spray pyrolysis method

被引:8
|
作者
Kerli, S. [1 ]
Alver, U. [2 ]
Tanriverdi, A. [3 ]
Avar, B. [4 ]
机构
[1] Kahramanmaras Sutcu Imam Univ, Dept Energy Syst Engn, Fac Elbistan Technol, TR-46300 Kahramanmaras, Turkey
[2] Karadeniz Tech Univ, Met & Mat Engn, TR-61080 Trabzon, Turkey
[3] Kahramanmaras Sutcu Imam Univ, Dept Phys, TR-46100 Kahramanmaras, Turkey
[4] Bulent Ecevit Univ, Dept Met Engn, TR-67100 Incivez, Zonguldak, Turkey
关键词
THIN-FILMS; SOLAR-CELLS; TRANSPARENT; DEPOSITION; TEMPERATURE; DIODE;
D O I
10.1134/S1063774515060139
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this work, ZnO and boron doped ZnO (ZnO:B) thin films were produced by chemical spray pyrolysis method. ZnO and ZnO:B films were obtained onto glass substrates at 450A degrees C by spray pyrolysis method and the physical properties of those films were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectrometer (UV) and four probe technique. XRD measurements show that all films have hexagonal wurtzite structure and all films grow preferentially along (002) direction. Morphologies of the films were examined by using a scanning electron microscopy and it was observed that almost all films were quite intense with a regular structure. Optical measurements showed that the band gap energies of the films increased with boron concentrations. The resistances of the B-doped ZnO films were measured by four probe method and resistances of films initially decreased to its minimum 1 at% boron doping and then it increased again with increasing B concentration. It was also observed that that boron doping increased the activation energies of the films.
引用
收藏
页码:946 / 950
页数:5
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