A comprehensive circuit model for evaluating the response of silicon photomultipliers in continuous wave light regime

In this paper, a comprehensive dynamic model for silicon photomultiplier (SiPM) detectors is proposed to investigate their response when exposed to the light of any wavelength and relatively high intensity. Also, a procedure is proposed to perform reliable circuit-level simulations to predict the response of these detectors under various photon rates. The approach of dynamic model is based on the state of microcells in terms of overvoltage, elapsed recharging time, and their effect on the triggering probability with which the detector current and voltage can be accurately simulated. Using the proposed model, the SiPM behaviour is examined under various continuous illumination power in simulation. The effectiveness of the proposed model and the simulation method are verified by experimental results extracted from two SiPM detectors.