A novel technology for the formation of a very small bevel angle for edge termination

被引：19
|
作者：
Yan, F
Qin, C
Zhao, JH
机构：
[1] Rutgers State Univ, SiCLAB, ECE Dept, Piscataway, NJ 08854 USA
[2] United Silicon Carbide Inc, New Brunswick Technol Ctr, New Brunswick, NJ 08901 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
avalanche breakdown; edge termination; inductively coupled plasma; positive bevel;
D O I：
10.4028/www.scientific.net/MSF.389-393.1305
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel technology toward achieving a bevel edge termination with a very low bevel angle has been developed. 4H-SiC diodes terminated by the positive bevel fabricated with this technology are demonstrated. The reverse current-voltage (I-V) characteristics are reported.
引用
收藏
页码：1305 / 1308
页数：4
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