A novel technology for the formation of a very small bevel angle for edge termination

被引：19
|
作者：
Yan, F
Qin, C
Zhao, JH
机构：
[1] Rutgers State Univ, SiCLAB, ECE Dept, Piscataway, NJ 08854 USA
[2] United Silicon Carbide Inc, New Brunswick Technol Ctr, New Brunswick, NJ 08901 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
avalanche breakdown; edge termination; inductively coupled plasma; positive bevel;
D O I：
10.4028/www.scientific.net/MSF.389-393.1305
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel technology toward achieving a bevel edge termination with a very low bevel angle has been developed. 4H-SiC diodes terminated by the positive bevel fabricated with this technology are demonstrated. The reverse current-voltage (I-V) characteristics are reported.
引用
收藏
页码：1305 / 1308
页数：4
相关论文
共 50 条
  • [1] Study of a positive bevel angle edge termination for high voltage power structures
    Hidalgo, S
    Flores, D
    Obieta, I
    Mazarredo, I
    Millán, J
    CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2001, : 261 - 264
  • [2] Bevel Edge Termination for Vertical GaN Power Diodes
    Binder, Andrew T.
    Dickerson, Jeramy R.
    Crawford, Mary H.
    Pickrell, Greg W.
    Allerman, Andrew A.
    Sharps, Paul
    Kaplar, Robert J.
    2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), 2019, : 286 - 290
  • [3] Study of Passivation Layer on Bevel Edge Termination for SiC RSD
    Wang, Ziyue
    Liang, Lin
    Zhang, Ludan
    2019 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2019), 2019,
  • [4] Laser precision profiling of small-angle bevel-edge contour grinding wheels
    Zhou, Wei
    Chen, Genyu
    Pan, Huajun
    Luo, Fengrong
    Wei, Yi
    Li, Mingquan
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2022, 305
  • [5] Positive-bevel edge termination for SiC reversely switched dynistor
    Liang, Lin
    Pan, Ming
    Zhang, Ludan
    Shu, Yuxiong
    MICROELECTRONIC ENGINEERING, 2016, 161 : 52 - 55
  • [6] Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation
    Zeng, Ke
    Chowdhury, Srabanti
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (06) : 2457 - 2462
  • [7] Comparison in radiation tolerance between FLR planar junction termination and positive bevel edge termination for power diodes
    Liao, Xinfang
    Liu, Yi
    Xu, Changqing
    Wang, Chen
    Yang, Yintage
    MICROELECTRONICS JOURNAL, 2022, 128
  • [8] The very small angle neutron scattering instrument at the National Institute of Standards and Technology
    Barker, John
    Moyer, James
    Kline, Steven
    Jensen, Grethe
    Cook, Jeremy
    Gagnon, Cedric
    Kelley, Elizabeth
    Chabot, Jean Philippe
    Maliszewskyj, Nicholas
    Parikh, Chirag
    Chen, Wangchun
    Murphy, R. P.
    Glinka, Charles
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2022, 55 : 271 - 283
  • [9] Mg-implanted bevel edge termination structure for GaN power device applications
    Matys, Maciej
    Ishida, Takashi
    Nam, Kyung Pil
    Sakurai, Hideki
    Narita, Tetsuo
    Uesugi, Tsutomu
    Bockowski, Michal
    Suda, Jun
    Kachi, Tetsu
    APPLIED PHYSICS LETTERS, 2021, 118 (09)
  • [10] A concept of a novel edge termination technique: Junction Termination (RJT)
    Honda, Shigeto
    Fujii, Ryoich
    Kawakami, Tsuyoshi
    Fujioka, Seiji
    Narazaki, Atsushi
    Motonami, Kaoru
    2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2010, : 111 - 114
12345