Temperature field analysis of IC molding process based on three dimensional finite element model

被引:0
|
作者
Lin, ZC [1 ]
Chen, CC [1 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Engn Mech, Taipei, Taiwan
关键词
integrated circuit packaging; molding process; finite element method;
D O I
10.1007/s00231-003-0472-6
中图分类号
O414.1 [热力学];
学科分类号
摘要
In the case presented in this paper, the distribution of temperature fields of the molding model during each time interval was obtained as the simulation proceeded along the molding time by using the 3D FEM with a simple division mesh. The simulation results indicate that the most temperature rise is located at the upper right hand corner of the die pad, while the least temperature rise during the molding process is located at the upper right hand corner of the lead frame. Based on the simulation results of the temperature field distribution in the molding model, we obtained the temperature variation trend as a result of changes in the geometric shapes of the molding model. Therefore, the information on the molding model and the analysis of temperature distribution during the integrated circuit molding process presented in this paper can be considered as references for the molding design for integrated circuit packaging process.
引用
收藏
页码:477 / 485
页数:9
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