THz semiconductor hot electron bolometer (SHEB)

被引：0

作者：

Dobrovolsky, V. N. ^{[1
]}

Sizov, F. F. ^{[1
]}

机构：

[1] V Lashkariov Inst Semicond Phys, Nauki Av 41, UA-03028 Kiev, Ukraine

来源：

MILLIMETER-WAVE AND TERAHERTZ PHOTONICS | 2006年 / 6194卷

关键词：

THz; hot electrons; bolometer; MCT;

D O I：

10.1117/12.662265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Moderately cooled, fast and diffraction-limited THz bolometer is proposed and its theoretical model is developed. Unlike thermal bolometers, the radiation rapidly heats only electrons in narrow gap bipolar semiconductor without the semiconductor lattice inertial heating. In conditions determined this heating changes generation and recombination processes, that leads to the carrier concentration decrease and semiconductor resistance rise. This rise creates the device output signal. According to this model the SHEB on base of narrow gap mercury cadmium telluride (MCT) semiconductor at temperature of T = 78 K can have detectivity D* - (0.3-2) 107 CmHz(1/2)/W in the range of (0.0 1-1.5) THz.

引用

页数：6

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