Photoelectrochemical (PEC) studies on chemically deposited Bi2Se3 thin films

被引：0

作者：

Sankapal, BR ^{[1
]}

Pathan, HM ^{[1
]}

Lokhande, CD ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2002年 / 40卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Semiconducting Bi2Se3 thin films have been prepared from aqueous alkaline bath onto fluorine-doped tin oxide (FTO) glass substrates (sheet resistance similar to 7 Ohm-cm(2)) by chemical bath deposition (CBD) at room temperature (27 degreesC). The films formed are of nanocrystalline, smooth, homogeneous and well covered to the substrate surface as evidenced from X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies, respectively. These films are annealed at 200 degreesC for 4 hr in air, The annealed Bi2Se3 films are used for photoelectrochemical (PEC) characterization using polysulphide as an electrolyte and graphite as a counter electrode. The characteristics such as current-voltage (I-V), photovoltaic output and capacitance etc. have been studied and results are reported.

引用

页码：331 / 336

页数：6

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