Photoelectrochemical (PEC) studies on chemically deposited Bi2Se3 thin films

Semiconducting Bi2Se3 thin films have been prepared from aqueous alkaline bath onto fluorine-doped tin oxide (FTO) glass substrates (sheet resistance similar to 7 Ohm-cm(2)) by chemical bath deposition (CBD) at room temperature (27 degreesC). The films formed are of nanocrystalline, smooth, homogeneous and well covered to the substrate surface as evidenced from X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies, respectively. These films are annealed at 200 degreesC for 4 hr in air, The annealed Bi2Se3 films are used for photoelectrochemical (PEC) characterization using polysulphide as an electrolyte and graphite as a counter electrode. The characteristics such as current-voltage (I-V), photovoltaic output and capacitance etc. have been studied and results are reported.