Qualitative X-ray diffraction analysis of residual stresses in NdNiO3 thin films with metal-insulator transition

被引：3
|
作者：
Zaghrioui, M
Laffez, P
Goudeau, P
Thiaudière, D
机构：
[1] Univ Maine, Lab Phys Etat Condense, CNRS, UMR 6087, F-72085 Le Mans, France
[2] Univ Tours, Lab Electrodynam mat Avances, CNRS, FRE 2077, F-37200 Tours, France
[3] Univ Poitiers, Met Phys Lab, CNRS, UMR 6630, F-86962 Futuroscope, France
[4] Univ Paris 11, Utilisat Rayonnement Electromagnet Lab, CNRS, UMR 130, F-91898 Orsay, France
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2002年 / 21卷 / 17期
关键词：
D O I：
10.1023/A:1019781019560
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
NdNiO3 thin films deposited on Si(100) showed in plane macro residual stress in tension, and that the stress magnitude is more important in the textured sample than in the isotropic one. This study allowed to validate the hypothesis concerning the possible influence of residual stresses in NdNiO3 films on TMI.
引用
收藏
页码：1379 / 1383
页数：5
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