CRYSTALLOCHEMICAL MODEL OF ALTERNATIVE SUBSTRATES FOR EPITAXIAL GROWTH OF GaN THIN FILMS

被引：0
|
作者：
Volkova, E. A. [1 ]
Leonyuk, N. I. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Geol Fac, Dept Crystallog, Moscow 119992, Russia
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2002年 / 58卷
关键词：
GALLIUM NITRIDE; SUBSTRATE; STRUCTURE;
D O I：
10.1107/S010876730209894X
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：C349 / C349
页数：1
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