On the possibility of sub-60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

被引：28

作者：

Jana, Raj K. ^{[1
]}

Snider, Gregory L. ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期

关键词：

electrostriction; negative differential capacitance; surface potential; subthreshold slope; DIELECTRICS;

D O I：

10.1002/pssc.201300280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel method for the reduction of subthreshold slope below the room-temperature Boltzmann limit of 60 mV/dec for a field-effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This internal voltage gain mechanism provides an opportunity for steep subthreshold slope switching below 60 mV/decade of the transistor current. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1469 / 1472

页数：4

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