On the possibility of sub-60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

被引：28

作者：

Jana, Raj K. ^{[1
]}

Snider, Gregory L. ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期

关键词：

electrostriction; negative differential capacitance; surface potential; subthreshold slope; DIELECTRICS;

D O I：

10.1002/pssc.201300280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel method for the reduction of subthreshold slope below the room-temperature Boltzmann limit of 60 mV/dec for a field-effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This internal voltage gain mechanism provides an opportunity for steep subthreshold slope switching below 60 mV/decade of the transistor current. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1469 / 1472

页数：4

共 50 条

[1] Sub-60 V/decade Steep Transistors with Compliant Piezoelectric Gate Barriers
Jana, Raj K.
Ajoy, Arvind
Snider, Gregory
Jena, Debdeep
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
[2] Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
McGuire, Felicia A.
Lin, Yuh-Chen
Price, Katherine
Rayner, G. Bruce
Khandelwal, Sourabh
Salahuddin, Sayeef
Franklin, Aaron D.
NANO LETTERS, 2017, 17 (08) : 4801 - 4806
[3] Sub-60 mV/Decade Dynamic Subthreshold Swing in Bulk Negative Capacitance Junctionless MOSFET
Ruma, S. R.
Gupta, Manish
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (11) : 7156 - 7161
[4] Carbon nanotubes: From growth, placement and assembly control to 60mV/decade and sub-60 mV/decade tunnel transistors
Zhang, Guangyu
Wang, Xinran
Li, Xiaolin
Lu, Yuerui
Javey, Ali
Dai, Hongjie
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 160 - +
[5] Negative Capacitance Oxide Thin-Film Transistor With Sub-60 mV/Decade Subthreshold Swing
Li, Yuxing
Liang, Renrong
Wang, Jiabin
Jiang, Chunsheng
Xiong, Benkuan
Liu, Houfang
Wang, Zhibo
Wang, Xuefeng
Pang, Yu
Tian, He
Yang, Yi
Ren, Tian-Ling
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (05) : 826 - 829
[6] Multi -gate -driven In-Ga-Zn-O memtransistors with a Sub-60 mV/decade subthreshold swing for neuromorphic and memlogic applications
Qiu, Weijie
Sun, Jia
Liu, Wanrong
Huang, Yulong
Chen, Yang
Yang, Junliang
Gao, Yongli
ORGANIC ELECTRONICS, 2020, 84
[7] Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs
Cui, Peng
Lin, Guangyang
Zhang, Jie
Zeng, Yuping
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (08) : 1185 - 1188
[8] Figure of merit for and identification of sub-60 mV/decade devices
Vandenberghe, William G.
Verhulst, Anne S.
Soree, Bart
Magnus, Wim
Groeseneken, Guido
Smets, Quentin
Heyns, Marc
Fischetti, Massimo V.
APPLIED PHYSICS LETTERS, 2013, 102 (01)
[9] AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade
Lu, Hao
Yang, Ling
Hou, Bin
Zhang, Meng
Wu, Mei
Ma, Xiao-Hua
Hao, Yue
APPLIED PHYSICS LETTERS, 2022, 120 (17)
[10] Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing
Dai, Quan
Kim, Ryun-Hwi
Lee, Jun-Hyeok
Kim, Jeong-Gil
Thingujam, Terirama
Kang, Seung-Hyeon
Ahn, Woo-Hyun
Kim, Eun-Jin
Lee, Jung-Hee
2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2020,

← 1 2 3 4 5 →