Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth

被引：4

作者：

Sambonsuge, S. ^{[1
]}

Nikitina, L. N. ^{[2
]}

Hervieu, Yu. Yu. ^{[3
]}

Suemitsu, M. ^{[1
]}

Filimonov, S. N. ^{[3
]}

机构：

[1] Tohoku Univ, Sendai, Miyagi 980, Japan

[2] Natl Res Tomsk Polytech Univ, Tomsk, Russia

[3] Natl Res Tomsk State Univ, Tomsk, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2014年 / 56卷 / 12期

基金：

日本学术振兴会; 俄罗斯基础研究基金会;

关键词：

silicon carbide; silicon; heteroepitaxy; surface structure; surface energy; CHEMICAL-VAPOR-DEPOSITION; 100; SI; MONOMETHYLSILANE;

D O I：

10.1007/s11182-014-0197-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.

引用

页码：1439 / 1444

页数：6

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