Gold Catalysis Meets Materials Science - A New Approach to π-Extended Indolocarbazoles

被引：24

作者：

Hendrich, Christoph M. ^{[1
]}

Bongartz, Lukas M. ^{[1
]}

Hoffmann, Marvin T. ^{[2
]}

Zschieschang, Ute ^{[3
]}

Borchert, James W. ^{[3
]}

Sauter, Desiree ^{[1
,4
,5
]}

Kraemer, Petra ^{[1
]}

Rominger, Frank ^{[1
]}

Mulks, Florian F. ^{[1
,6
,7
]}

Rudolph, Matthias ^{[1
]}

Dreuw, Andreas ^{[2
]}

Klauk, Hagen ^{[3
]}

Hashmi, A. Stephen K. ^{[1
]}

机构：

[1] Heidelberg Univ, Organ Chem Inst, Neuenheimer Feld 270, D-69120 Heidelberg, Germany

[2] Heidelberg Univ, Interdisciplinary Ctr Sci Comp IWR, Neuenheimer Feld 205 A, D-69120 Heidelberg, Germany

[3] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany

[4] Max Planck Inst Med Res, Dept Cellular Biophys, Jahnstr 29, D-69120 Heidelberg, Germany

[5] Heidelberg Univ, Inst Phys Chem, Dept Biophys Chem, Neuenheimer Feld 253, D-69120 Heidelberg, Germany

[6] Inst Basic Sci IBS, Ctr Catalyt Hydrocarbon Functionalizat, Daejeon 34141, South Korea

[7] Korea Adv Inst Sci & Technol KAIST, Dept Chem, Daejeon 34141, South Korea

来源：

ADVANCED SYNTHESIS & CATALYSIS | 2021年 / 363卷 / 02期

关键词：

Materials science; gold catalysis; indolocarbazoles; organic semiconductors; modular synthesis; thin-film transistors; THIN-FILM TRANSISTORS; ENANTIOSELECTIVE SYNTHESIS; CHARGE-TRANSFER; HIGH-MOBILITY; MOLECULES; SINGLE; PIXEL;

D O I：

10.1002/adsc.202001123

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Herein we describe a modular, convergent synthesis of substituted benzo[a]benzo[6,7]-indolo[2,3-h]carbazoles (BBICZs) using a bidirectional gold-catalyzed cyclization reaction as a key step. A building block strategy enabled the easy variation of substituents at different positions of the core structure and a general analysis of substitution effects on the materials properties of the target compounds. All BBICZs were fully characterized and their optical and electronic properties were studied experimentally as well as by computational methods. Organic thin-film transistors based on eight selected derivatives were fabricated by vacuum deposition and charge-carrier mobilities up to 1 cm(2)/Vs were measured.

引用

页码：549 / 557

页数：9

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