ITO/AlNdN/Al contact process for active matrix OLED displays

被引：4
|
作者：
Kim, M. [1 ]
Jin, G. H. [1 ]
机构：
[1] Samsung Mobile Display Co Ltd, Yongin 449577, Gyeonggi Do, South Korea
来源：
ELECTRONICS LETTERS | 2009年 / 45卷 / 08期
关键词：
D O I：
10.1049/el.2009.0037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Integrating circuits into organic light emitting diode displays requires fabrication of polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on glass substrates. A novel ITO/AlNdN/Al contact process has been developed for the pixel step. In metallisation, ITO/Al interconnection is metallurgically undesirable. An AlNdN layer is selected for a pixel material and ITO/AlNdN/Al structure is applied to the pixel line. Reported is the feasibility for the multilevel ITO/AlNdN/Al contact, which can make the poly-Si TFTs competitive in the market.
引用
收藏
页码：421 / 422
页数：2
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