The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition

被引：42

作者：

Grudowski, PA

Holmes, AL

Eiting, CJ

Dupuis, RD

机构：

[1] Microelectronics Research Center, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 24期

关键词：

D O I：

10.1063/1.117004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth and photoluminescence (300 and 4.2 K) characterization of unintentionally doped GaN on both exact and vicinal (0001) sapphire substrates. The GaN heteroepitaxial layers are grown by metalorganic chemical vapor deposition on sapphire substrates using various growth conditions. The (0001) Al2O3 c-plane substrates are oriented exactly (0001) or misoriented either 2 degrees towards the a plane (<11(2)over bar 0>), 5 degrees towards the m plane (<10(1)over bar 0>), or 9 degrees toward the m plane. A comparison of the 300 and 4.2 K optical characteristics of the samples grown on the different substrates indicates that a higher photoluminesence intensity is measured for the films on misoriented substrates. (C) 1996 American Institute of Physics.

引用

页码：3626 / 3628

页数：3

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