Influence of substrate misorientation on carbon impurity incorporation and electrical properties of p-GaN grown by metalorganic chemical vapor deposition

被引：19

作者：

Jiang, Lingrong ^{[1
,2
,3
]}

Liu, Jianping ^{[1
,2
,3
]}

Tian, Aiqin ^{[2
,3
]}

Ren, Xiaoyu ^{[2
,3
]}

Huang, Siyi ^{[2
,3
]}

Zhou, Wei ^{[2
,3
]}

Zhang, Liqun ^{[2
,3
]}

Li, Deyao ^{[2
,3
]}

Zhang, Shuming ^{[2
,3
]}

Ikeda, Masao ^{[2
,3
]}

Yang, Hui ^{[1
,2
,3
]}

机构：

[1] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[3] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

SURFACE-MORPHOLOGY; PHASE EPITAXY; KINETICS; QUALITY;

D O I：

10.7567/1882-0786/ab0da2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of substrate misorientation angle on carbon impurity incorporation and electrical properties of p-GaN grown at a low temperature of 900 degrees C has been explored. Secondary ion mass spectrometry results reveal that the concentration of unintentionally incorporated carbon impurity decreases remarkably (from 2 x 10(17) cm(-3) to 7 x 10(16) cm(-3)) with the increasing misorientation angle. The step motion model is introduced to explain the reason for decreasing carbon concentration with increasing misorientation angle. It has also been found the hole concentration of p-GaN increases and the resistivity of p-GaN decreases with the increasing misorientation angle since carbon acts as compensating donor in p-GaN. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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