The evolution of microstructure and photoluminescence of SiCN films with annealing temperature

被引：21
|
作者：
Du, Xi-Wen [1 ]
Fu, Yang
Sun, Jing
Yao, Pei
机构：
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Anal Ctr, Tianjin 300072, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 09期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2194208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon carbonitride (SiCN) films were deposited by radio-frequency magnetron sputtering and then annealed at different temperatures from 1100 to 1300 degrees C in hydrogen atmosphere. The as-deposited films and films annealed at 1100 degrees C did not show photoluminescence (PL), whereas strong PL peaks appeared at 355 and 469 nm after annealing at 1200 and 1300 degrees C. X-ray diffraction, transmission electron microscope, and Fourier transform infrared spectrometer results show that the enhancement of PL properties is due to the change of microstructure and composition. (C) 2006 American Institute of Physics.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Microstructure evolution and photoluminescence in nanocrystalline MgxZn1-xO thin films
    Sahaym, U.
    Norton, M. G.
    Huso, J.
    Morrison, J. L.
    Che, H.
    Bergman, L.
    NANOTECHNOLOGY, 2011, 22 (42)
  • [32] Microstructure and Properties of Superconducting Tungsten Thin Films: Influence of Substrate Temperature and Annealing temperature
    Wang, Yu
    Liu, Yuanyuan
    Zhang, Jianjie
    Zhang, Yifei
    Liu, Zhouhui
    Xu, Chi
    Zhang, Shaojun
    Cheng, Jianping
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2025, 218 (3-4) : 258 - 267
  • [33] Effect of annealing temperature on the microstructure and photoluminescence of low resistivity Si/Si - N/Ta - N thin films using magnetron sputtering
    Chung, C. K.
    Chen, T. S.
    Chang, N. W.
    Liao, M. W.
    Lee, C. T.
    THIN SOLID FILMS, 2011, 520 (05) : 1460 - 1463
  • [34] Assembly and photoluminescence of SiCN nanoparticles
    Ng, VM
    Xu, M
    Huang, SY
    Long, JD
    Xu, S
    THIN SOLID FILMS, 2006, 506 : 283 - 287
  • [35] Microstructure evolution of Al-Mg-B thin films by thermal annealing
    Tian, Y
    Constant, A
    Lo, CCH
    Anderegg, JW
    Russell, AM
    Snyder, JE
    Molian, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 1055 - 1063
  • [36] Evolution of Microstructure and Surface Topography of Gold Thin Films under Thermal Annealing
    Dash, P.
    Rath, H.
    Dash, B. N.
    Mallick, P.
    Basu, T.
    Som, T.
    Singh, U. P.
    Mishra, N. C.
    FUNCTIONAL MATERIALS-BOOK, 2012, 1461 : 214 - 217
  • [37] The photoluminescence of SiCN thin films prepared by C+ implantation into α-SiNx:H
    Liu, Yuzhen
    Zhang, Xia
    Chen, Chao
    Zhang, Guobin
    Xu, Pengshou
    Chen, Dapeng
    Dong, Lijun
    THIN SOLID FILMS, 2010, 518 (15) : 4363 - 4366
  • [38] Visible photoluminescence in SiCN nanoparticle films grown by plasma rf magnetron sputtering
    Xu, M
    Xu, S
    Ng, VM
    Huang, SY
    Chai, JW
    Long, JD
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2006, 20 (01): : 73 - 83
  • [39] Effect of high-temperature annealing on the optical and photoluminescence properties of nanocrystalline SiC films
    Semenov, A. V.
    Lopin, A. V.
    Puzikov, V. M.
    Vovk, O. M.
    Dmitruk, I. N.
    Romano, V.
    THIN SOLID FILMS, 2012, 520 (21) : 6626 - 6630
  • [40] Effects of annealing on the structure and photoluminescence of ZnO films
    Fang, ZB
    Gong, HX
    Liu, XQ
    Xu, DY
    Huang, CM
    Wang, YY
    ACTA PHYSICA SINICA, 2003, 52 (07) : 1748 - 1751
12345