The evolution of microstructure and photoluminescence of SiCN films with annealing temperature

被引：21
|
作者：
Du, Xi-Wen [1 ]
Fu, Yang
Sun, Jing
Yao, Pei
机构：
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Anal Ctr, Tianjin 300072, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 09期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2194208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon carbonitride (SiCN) films were deposited by radio-frequency magnetron sputtering and then annealed at different temperatures from 1100 to 1300 degrees C in hydrogen atmosphere. The as-deposited films and films annealed at 1100 degrees C did not show photoluminescence (PL), whereas strong PL peaks appeared at 355 and 469 nm after annealing at 1200 and 1300 degrees C. X-ray diffraction, transmission electron microscope, and Fourier transform infrared spectrometer results show that the enhancement of PL properties is due to the change of microstructure and composition. (C) 2006 American Institute of Physics.
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页数：4
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