Growth and properties of CuInS2 single crystals

被引:4
|
作者
Bodnar, IV [1 ]
机构
[1] Belarussian State Univ Informat Sci & Radio Engn, Minsk 220072, BELARUS
关键词
D O I
10.1007/BF02758006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CnInS(2) single crystals 14-16 mm in diameter and up to 40 mm in length were: grown by the traveling solvent method. The crystals were found to be n-type, with a conductivity of 0.1-10 S/cm, carrier concentration of 10(16)-10(17) cm(-3), and carrier mobility of 150-220 cm(2)/(Vs). The anisotropic thermal expansion of the crystals was measured.
引用
收藏
页码:108 / 110
页数:3
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