Valence band offset at the CdS/CdTe interface

被引：14
|
作者：
Boieriu, P
Sporken, R
Sivananthan, S
机构：
[1] Univ Illinois, Dept Phys, Microphys Lab, Chicago, IL 60607 USA
[2] Fac Univ Notre Dame Paix, Lab Phys Mat Elect, B-5000 Namur, Belgium
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 04期
关键词：
D O I：
10.1116/1.1491989
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wurtzite CdS was grown by molecular beam epitaxy on CdTe((1) over bar(1) over bar(1) over bar) B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe((1) over bar(1) over bar(1) over bar )B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment. (C) 2002 American Vacuum Society.
引用
收藏
页码：1777 / 1780
页数：4
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