GaSb: Surface tension and floating-zone growth

被引：16

作者：

Tegetmeier, A ^{[1
]}

Croll, A ^{[1
]}

Danilewsky, A ^{[1
]}

Benz, KW ^{[1
]}

机构：

[1] UNIV FREIBURG,INST KRISTALLOG,D-79104 FREIBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)00134-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The dependence of the surface tension of GaxSb1-x melts on stoichiometry and temperature was measured using the sessile drop technique. A method of determining surface tension directly from pictures of the floating-zone growth process was used. The growth angle of GaSb was measured under 1g and compared to mu g results. An estimation of the critical Marangoni number is given.

引用

页码：651 / 656

页数：6

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