Creation of Silicon Nanostructures in Electric Arc Discharge

被引：13
|
作者：
Timerkaev, B. A. [1 ]
Shakirov, B. R. [1 ]
Timerkaeva, D. B. [1 ]
机构：
[1] Kazan Natl Res Tech Univ, Kazan 420111, Russia
来源：
HIGH ENERGY CHEMISTRY | 2019年 / 53卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
nanotubes; electrical discharge; plasma chemistry; silicon nanostructures; silicon nanotubes;
D O I：
10.1134/S0018143919020152
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The paper presents methods for growing silicon nanotubes using an electric discharge with different values of the electric field strength in the interelectrode gap. It is shown that the shapes of the grown nanomaterials are significantly influenced by both the surrounding gaseous medium and the electric field strength in the interelectrode gap. The silicon nanostructures obtained have been a rather complex and, at the same time, definitely regular configuration and can be widely used in electronics, photovoltaics, batteries, and even as structural elements in composite materials.
引用
收藏
页码：162 / 166
页数：5
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