A Two-Stage S-/X-Band CMOS Power Amplifier for High-Resolution Radar Transceivers

被引：14

作者：

Ko, Jaeyong ^{[1
,2
]}

Nam, Sangwook ^{[1
,2
]}

机构：

[1] INMC, Seoul 151742, South Korea

[2] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151742, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2018年 / 28卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

CMOS; dual band; power amplifier (PA); radar transceiver; reconfigurable; switchable transformer; TRANSFORMER;

D O I：

10.1109/LMWC.2018.2839646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a reconfigurable S-/X-band power amplifier (PA) integrated into a 0.18-mu m RF CMOS process. A switchable transformer for output matching is operated by tuning its primary winding and a shunt capacitor under a 50-Omega load with passive efficiency of more than 63%/67% for the S-/X-band. Series resonant circuits with bond wires are employed at common-mode nodes, greatly improving the X-band performance of the PA. Despite the use of interstage matching without any tunable elements, the PA presents a power gain of more than 19.5 dB at both 3 and 8 GHz. The PA provides saturated output power of 24.8/21.5 (21.5) dBm with a power-added efficiency of 32.8%/11.1% (10.7%) at 3/8 (9) GHz. The 1-dB bandwidth is 0.6/2 GHz (2.8-3.4/7.5-9.5 GHz) for the S-/X-band. This amplifier demonstrates suitable performance for dual-band high-resolution radar transceivers.

引用

页码：606 / 608

页数：3

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