The study of Optical and Electrical Properties of a-SiC:H for Multi-junction Si Thin Film Solar Cell

被引：0

作者：

Shim, J. H. ^{[1
]}

Yoon, W. K. ^{[1
]}

Hwang, S. T. ^{[1
]}

Ahn, S. W. ^{[1
]}

Lee, H. M. ^{[1
]}

机构：

[1] LG Elect Inc, 16 Woomyeon Dong, Seoul, South Korea

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010 | 2010年 / 1245卷

关键词：

HYDROGENATED AMORPHOUS-SILICON; CVD;

D O I：

10.1557/PROC-1245-A07-11

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Studies have shown that wide band gap material is required to investigate for multi-junction applications. Here, we address proper deposition condition for a-SiC:H film adopting various deposition conditions. Those conditions were realized to single layers and cells to analyze their electrical and optical properties. In high power high pressure regime, we observed that the defect density get much lowered to the similar level of a-Si:H film with high H-2 dilution. Solar cells fabricated with the optimized condition show high efficiency and lower LID effect with only 13 % reduction indicating that a-SiC:H is promising materials for multi-junction solar cells.

引用

页码：143 / 148

页数：6

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