Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon

被引：0

作者：

Lenahan, PM ^{[1
]}

Kang, AY ^{[1
]}

Campbell, JP ^{[1
]}

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several recent studies provide strong circumstantial evidence indicating that a specific type of atomic-scale defect plays an important, likely dominating, role in stress induced leakage currents. The defect involves an oxygen deficient silicon dangling bond in the oxide; it is called an E' center.

引用

页码：608 / 615

页数：8

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