A high-efficiency design for 5-W 2.4/5.8 GHz concurrent dual-band class-E power amplifier

被引:9
|
作者
Nguyen, Dang-An [1 ]
Seo, Chulhun [1 ]
机构
[1] Soongsil Univ, Dept Informat Commun Mat & Chem Convergence Techn, Seoul, South Korea
基金
新加坡国家研究基金会;
关键词
class‐ E power amplifier; GaN HEMT transistor; harmonic control; real‐ to‐ complex matching network;
D O I
10.1002/mop.32712
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, a distributed element-based load network is proposed for designing a high-efficiency dual-band (DB) 5-W Class-E power amplifier (PA), at two widely spaced frequencies of 2.4 and 5.8 GHz. This network consists of two different stages. The first stage deploys a flexible network configuration with crossed transmission lines (TLINs) to provide concurrent DB fundamental matching in a closed-form derivation, which transforms the standard resistance of 50 omega directly to the optimal complex impedances. By tolerating the combination of the up-side and down-side TLINs, the size of the overall circuit as well as the implementation complexity are reduced. The second stage uses a DB TLIN-based resonator preceded by a series 50 omega stub to control the harmonic impedances without altering the fundamental impedances, ensuring high efficiency at the fundamental frequencies. The measured prototype shows highest power added efficiency (PAE) of around 62.9% and 61.7% with output power of about 39 and 35 dBm at 2.45 and 5.76 GHz, respectively.
引用
收藏
页码:1083 / 1090
页数:8
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