The dynamics of hole burning in 4fn-4fn-15d1 transition of Eu2+ in MgS

被引：3
|
作者：
Biyikli, L [1 ]
Hasan, Z [1 ]
机构：
[1] Temple Univ, Dept Phys, Philadelphia, PA 19122 USA
来源：
JOURNAL OF LUMINESCENCE | 1999年 / 83-4卷
关键词：
photon-gated hole burning; rare earth; sulfides;
D O I：
10.1016/S0022-2313(99)00128-3
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
It is known that MgS : EU2 (+) /EU3 + shows the most promising characteristics of any frequency domain optical storage material (Hasan et al., Appl. Phys. Lett. 72 (1998) 2373, 3399). Efficient photon-gated hole burning is observed in 4f(7)-4f(6) 5d(1) ZPL transition of Eu2 + in MgS. In this study, the dynamics of hole burning and hole erasure is investigated. The dependence of the holedepth and holewidth on the burning time and the burn power levels has been experimentally studied. To explain the experimental data a theoretical model has been developed. The model shows very good agreement with the experimental data. The same model explains the behavior of the erasure and thermal cycling of holes. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：373 / 377
页数：5
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