Toward residual-layer-free nanoimprint lithography in large-area fabrication

被引:12
|
作者
Yoon, Hyunsik [1 ]
Lee, Hyemin [1 ]
Lee, Won Bo [2 ]
机构
[1] Seoul Natl Univ Sci & Technol, Dept Chem & Biomol Engn, Seoul 139743, South Korea
[2] Sogang Univ, Dept Chem & Biomol Engn, Seoul 121732, South Korea
关键词
nanoimprint; residual layer; polymer; mold; roll-to-roll process; ROLL-TO-ROLL; FLASH IMPRINT LITHOGRAPHY; MOLDING TECHNIQUES; PATTERN TRANSFER; MICROSTRUCTURES; DENSITY; SURFACE; STEP; THIN; NANOFABRICATION;
D O I
10.1007/s13367-014-0005-5
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
In the paper, residual-layer-free nanoimprint lithography for large-area fabrication is reviewed. In order to remove the residual layer during the imprint process, polymer resists and mold materials should be designed with the aspects of surface chemistry and mold geometries in mind. Various approaches for residual-layer-free nanoimprint lithography are discussed including incomplete filling by polymer mass, reverse imprint methods, self-removal techniques, and the employment of elastomeric mold deformation. In addition, issues that must be overcome to enable large-area roll-to-roll nanoimprinting without a residual layer are presented.
引用
收藏
页码:39 / 48
页数:10
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