Confinement in silicon nanowires: Optical properties

被引:45
|
作者
Bhattacharya, S
Banerjee, D
Adu, KW
Samui, S
Bhattacharyya, S [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
关键词
D O I
10.1063/1.1787164
中图分类号
O59 [应用物理学];
学科分类号
摘要
The blueshift of the optical absorption edge along with the intense red photoluminescence (PL) peak has been observed from micron-long crystalline silicon nanowires prepared by pulsed-laser vaporization of heated Si (mixed with metal catalyst) targets. Previous studies on the confinement in silicon nanostructures resulted in a dispute regarding the application of theoretical models to explain their optical properties. Based on the microstructure a phenomenological confinement model, incorporating the nanowire diameter distribution is used, which is found to describe the optical properties including the shape of absorption spectra, the band gap, and the PL peak position of the Si nanowires very well. (C) 2004 American Institute of Physics.
引用
收藏
页码:2008 / 2010
页数:3
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