Ferroelectric properties of lead-free polycrystalline CaBi2Nb2O9 thin films on glass substrates

被引:4
|
作者
Ahn, Yoonho [1 ,2 ]
Jang, Joonkyung [3 ]
Son, Jong Yeog [1 ,2 ]
机构
[1] Kyung Hee Univ, Dept Appl Phys, Yongin 446701, South Korea
[2] Kyung Hee Univ, Inst Nat Sci, Yongin 446701, South Korea
[3] Pusan Natl Univ, Dept Nanoenergy Engn, Busan 609735, South Korea
来源
AIP ADVANCES | 2016年 / 6卷 / 03期
基金
新加坡国家研究基金会;
关键词
PIEZOELECTRIC CERAMICS; DOMAIN-STRUCTURES; MEMORIES; TITANATE; ACTUATORS; SENSORS;
D O I
10.1063/1.4944956
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
CaBi2Nb2O9 (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 mu C/cm(2) (2P(r) similar to 9.6 mu C/cm(2)), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezore-sponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film. (C) 2016 Author(s).
引用
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页数:5
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