Stress effect on the tuning properties of Ba0.5Sr0.5TiO3 thin films

被引：7
|
作者：
Kim, ID [1 ]
Park, JH [1 ]
Kim, HG [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 07期
关键词：
D O I：
10.1149/1.1483157
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Ferroelectric thin films are currently being used to develop tunable microwave circuits based on the electric-field dependence of the dielectric constant. Perovskite Ba0.5Sr0.5TiO3 thin films were deposited on Pt/Ti/SiO2/Si and LSCO/Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering. Extensive X-ray diffraction studies exhibit good in-plane relationship of [100]Ba1-xSrxTiO3 (BSTO)//[100//[La0.5Sr0.5CoO3 (LSCO). At the applied voltage of 7 V, the tunability values of barium strontium titanate (BST) films grown on Pt and LSCO/Pt were nearly 2.2:1 and 2.8:1, respectively. The change of dielectric properties in BST/LSCO and BST/Pt is attributed to the change in the film stress and the film orientation. (C) 2002 The Electrochemical Society.
引用
收藏
页码：F18 / F21
页数：4
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