Response to "Comment on 'Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures' " [Appl. Phys. Lett. 81, 3681 (2002)]

被引：3

|

作者：

Khosru, QDM ^{[1
]}

Nakajima, A ^{[1
]}

Yoshimoto, T ^{[1
]}

Yokoyama, S ^{[1
]}

机构：

[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398527, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 19期

关键词：

D O I：

10.1063/1.1519331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3683 / 3684

页数：2

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