Response to "Comment on 'Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures' " [Appl. Phys. Lett. 81, 3681 (2002)]

被引:3
|
作者
Khosru, QDM [1 ]
Nakajima, A [1 ]
Yoshimoto, T [1 ]
Yokoyama, S [1 ]
机构
[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398527, Japan
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D O I
10.1063/1.1519331
中图分类号
O59 [应用物理学];
学科分类号
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页码:3683 / 3684
页数:2
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