共 33 条
Response to "Comment on 'Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal-oxide-semiconductor structures' " [Appl. Phys. Lett. 81, 3681 (2002)]
被引:3
|作者:
Khosru, QDM
[1
]
Nakajima, A
[1
]
Yoshimoto, T
[1
]
Yokoyama, S
[1
]
机构:
[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398527, Japan
关键词:
D O I:
10.1063/1.1519331
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
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收藏
页码:3683 / 3684
页数:2
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